800-900 mhz base station applications rf & microwave transistors .250 x .320 4lfl (m156) epoxy sealed . 800 - 900 mhz . 24 volts . common emitter . gold metallization . internal input matching . class ab linear operation . p out = 30 w min. with 7.5 db gain description the SD1424 is a gold metallized epitaxial silicon npn planar transistor using diffused emitter ballast resistors for high linearity class ab operation in cellular base station application. pin connection branding SD1424 order code SD1424 absolute maximum ratings (t case = 25 c) symbol parameter value unit v cbo collector-base voltage 48 v v ces collector-emitter voltage 45 v v ebo emitter-base voltage 4.0 v i c device current 4 a p diss power dissipation 87.5 w t j junction temperature +200 c t stg storage temperature - 65 to +150 c r th(j-c) junction-case thermal resistance 2.0 c/w SD1424 1. collector 3. emitter 2. base thermal data october 7, 1993 rev. 1 1/5
electrical specifications (t case = 25 c) symbol test conditions value unit min. typ. max. p out f = 960 mhz p in = 5.3 w v cc = 24 v 30 e e w g p f = 960 mhz p out = 30 w v cc = 24 v 7.5 e e db h cf = 960 mhz p out = 30 w v cc = 24 v 45 50 e % c ob f = 1 mhz v cb = 24 v (each side) e 20 24 pf note: i cq = 150ma static symbol test conditions value unit min. typ. max. bv cbo i c = 50ma i e = 0ma 48 50 e v bv ceo i c = 20ma i b = 0ma 25 30 e v bv ebo i e = 5ma i c = 0ma 3.5 4.0 e v i cbo v cb = 24v i e = 0ma e e 1.0 ma h fe v ce = 10v i c = 100ma 20 e 100 e dynamic typical performance power output vs power input SD1424 2/5 rev. 1
test circuit layout SD1424 rev. 1 3/5
c1, c2, c3 : 0.8 - 8pf variable capacitors c4, c5, c6, c7 : 62pf c8 : 22 m f c9 : 180pf c10 : 47 m f, 63v c11 : 180pf c12 : 10 m f, 63v d1, d2 : sd1423 devices l1, l2 : #22 awg with ferrite core l3 : 4 turns, #22 awg l4 : 2 turns, #22 awg l5 : 5 turns, #22 awg t1, t2 : l /4 transformers material: epsilam 10, er = 10.5, height = .050o test circuit SD1424 4/5 rev. 1
package mechanical data ref.: dwg. no.12-0156 information furnished is believed to be accurate and reliable. however, sgs-thomson microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. no license is granted by implication or otherwise under any patent or patent rights of sgs-thomson microelectronics. specifications mentioned in this publication are subject to change without notice. this publication supersedes and replaces all information previously supplied. sgs-thomson microelectronics products are not authorized for use ascritical components in life support devices or systems without express written approval of sgs-thomson microelectonics. ? 1994 sgs-thomson microelectronics - all rights reserved sgs-thomson microelectronics group of companies australia - brazil - france - germany - hong kong - italy - japan - korea - malaysia - malta - morocco - the netherlands - singapore - spain - sweden - switzerland - taiwan - thailand - united kingdom - u.s.a SD1424 rev. 1 5/5
|
